Difference between revisions of "RD70HVF1 MOSFET Power Transistor"
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RD70HVF1 by Mitsubishi Electric Semiconductor is a Field Effect Transistor for amplification in the final stage of a radio transceiver. | RD70HVF1 by Mitsubishi Electric Semiconductor is a Field Effect Transistor for amplification in the final stage of a radio transceiver. | ||
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| + | [[File:MOSFET_RD70HVF1.jpg]] | ||
The RD70HVF1 is a [[MOSFET]], MOS-FET, or MOS FET made by Mitsubishi Corporation. It is specifically designed for VHF/UHF High power amplifier application. | The RD70HVF1 is a [[MOSFET]], MOS-FET, or MOS FET made by Mitsubishi Corporation. It is specifically designed for VHF/UHF High power amplifier application. | ||
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* Efficiency: 60%typ.on VHF Band | * Efficiency: 60%typ.on VHF Band | ||
* Efficiency: 55%typ.on UHF Band | * Efficiency: 55%typ.on UHF Band | ||
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| + | [http://www.alldatasheet.com/datasheet-pdf/pdf/143968/MITSUBISHI/RD70HVF1.html Datasheet] courtesy of www.alldatasheet.com | ||
Revision as of 18:13, 25 May 2016
RD70HVF1 by Mitsubishi Electric Semiconductor is a Field Effect Transistor for amplification in the final stage of a radio transceiver.
The RD70HVF1 is a MOSFET, MOS-FET, or MOS FET made by Mitsubishi Corporation. It is specifically designed for VHF/UHF High power amplifier application.
Power rating:
- 70 watts at 175MHz
- 50 watts at 520MHz
High power and High Gain:
- Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
- Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
- Efficiency: 60%typ.on VHF Band
- Efficiency: 55%typ.on UHF Band
Datasheet courtesy of www.alldatasheet.com
