Difference between revisions of "RD70HVF1 MOSFET Power Transistor"
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| − | RD70HVF1 by Mitsubishi Electric Semiconductor is a Field Effect Transistor for amplification in the final stage of a radio transceiver. | + | RD70HVF1 by Mitsubishi Electric Semiconductor is a Field Effect Transistor (High Power Si MOSFET) for amplification in the final stage of a radio transceiver. It is rated at 12.5V with an output of 70W. |
[[File:MOSFET_RD70HVF1.jpg]] | [[File:MOSFET_RD70HVF1.jpg]] | ||
Revision as of 18:15, 25 May 2016
RD70HVF1 by Mitsubishi Electric Semiconductor is a Field Effect Transistor (High Power Si MOSFET) for amplification in the final stage of a radio transceiver. It is rated at 12.5V with an output of 70W.
The RD70HVF1 is a MOSFET, MOS-FET, or MOS FET made by Mitsubishi Corporation. It is specifically designed for VHF/UHF High power amplifier application.
Power rating:
- 70 watts at 175MHz
- 50 watts at 520MHz
High power and High Gain:
- Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
- Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
- Efficiency: 60%typ.on VHF Band
- Efficiency: 55%typ.on UHF Band
Datasheet courtesy of www.alldatasheet.com
